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Michael Shur

Rensselaer Polytechnic Institute, Electrical, Computer and System Engineering, Faculty Member

Engineer, physicist and entrepreuner

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366 Followers 61 Following 39 Co-authorsTotal Views1 Public Mention

Videos

Michael Shur co-Founder, Vice-President and Chief Technology Officer of Electronics of the Future, Inc.

Cyber security affects literally every computer user. A multibillion world-wide industry is tryin... more Cyber security affects literally every computer user. A multibillion world-wide industry is trying to solve this growing and very dangerous problem. And all these efforts are focused on fighting malicious software. However, the malicious hardware is even more of a threat and much harder to detect. Our company - Electronics of the Future, Inc. - has developed technology and a family of products to detect the malicious hardware. Electronics of the Future is using terahertz scanning technology and Artificial Intelligence to detect genuine and faked integrated circuits.

2 views

Papers

Concepts of terahertz and infrared devices based on graphene structures

2011 International Conference on Infrared, Millimeter, and Terahertz Waves, 2011

ABSTRACT We overview novel concepts of terahertz and infrared interband detectors and lasers base... more

Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells

Acta Physica Polonica A, 2008

Semiconductor material doping based on target valence band discontinuity

Electronic gadget disinfection

Low frequency noise of light emitting diodes (Invited Paper)

SPIE Proceedings, 2005

Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors

MRS Proceedings, 2002

Gate current plays an important role in determining the characteristics and limiting performance ... more Gate current plays an important role in determining the characteristics and limiting performance of GaN-based field effect transistors. In GaN-based HFETs, the gate current limits the gate voltage swing and, hence, the maximum device current. Since the electron transport across the wide band gap barrier layer involves trapping, under certain bias conditions, the gate current leads to the threshold voltage shifts and causes reliability problems. Under reverse bias, the gate leakage in GaN-based HFET dominates the minimum (pinch-off) drain current. Insulating gate HFETs (i.e. Metal Oxide Heterostructure Field Effect Transistors – MOSHFETs) have the gate leakage currents 4 – 6 orders of magnitude lower than HFETs, even at elevated temperatures up to 300 °C. In this paper, we report on the gate current characteristics in these devices at room and elevated temperatures. We propose a semi-empirical model for the current-voltage characteristics in these devices, which is in good agreement ...

(Invited) Deep Ultraviolet Light Emitting Diodes: Physics, Performance, and Applications

ECS Transactions, 2014

The key factor for developing deep UV LEDs is material’s quality of nitride epitaxial films. It c... more The key factor for developing deep UV LEDs is material’s quality of nitride epitaxial films. It could be dramatically improved by using novel MEMOCVD® technique. Using very narrow quantum wells (QWs) and energy band gap engineering in deep UV LEDs improves overlap between electron and hole wave functions and increases the Internal Quantum Efficiency (IQE) and External Quantum Efficiency (EQE). A novel transparent and reflecting top contact further boosts IQE and EQE and increases the power output and high external quantum efficiency of our Deep UV LEDs. Research is now under way to use these devices for improving quality and extending storage time of fruits and vegetables. Other applications include water and air purification, sterilization, biological threat identification, applications in medicine, biology, industrial processes, defense, and homeland security.

Finite-Temperature Band Gap Renormalization in Highly Photoexcited GaN Epilayers

physica status solidi (b), 1999

High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

physica status solidi (a), 2001

Controlled Synthesis of Single-Crystalline ZnO Nanoflakes on Arbitrary Substrates at Ambient Conditions

Particle & Particle Systems Characterization, 2013

Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire

Journal of Crystal Growth, 2011

Low-frequency noise in GaN nanowire transistors

Journal of Applied Physics, 2008

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

Journal of Applied Physics, 2008

ABSTRACT

$Research paper thumbnail of Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes$

Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes

Journal of Applied Physics, 2013

ABSTRACT An omnidirectional antireflection (AR) coating for a deep-ultraviolet (UV) AR band is de... more ABSTRACT An omnidirectional antireflection (AR) coating for a deep-ultraviolet (UV) AR band is designed and fabricated on the sapphire substrate of a deep-UV flip-chip light-emitting diode (LED) device. The two-layer AR coating uses the tailored- and low-refractive index nanoporous alumina fabricated by glancing-angle deposition methodology. The AR coating effectively matches the refractive indices between the air and sapphire substrate. At close-to-normal angles of incidence, this AR coating almost completely eliminates the Fresnel reflection at the sapphire/air interface of the deep-UV LED device. The resulting improvement of the light-extraction efficiency by 8% is in good agreement with the simulation results. For a total thickness of 172 nm for the two-layer AR coating, extinction was negligible (&lt;2%). The results show that nanoporous alumina thin films are excellent tailored- and low-refractive index thin film materials for high-performance deep-UV AR coating applications.

AlGaN Deep-Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2005

We report on the development of AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs) g... more We report on the development of AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs) grown by migration-enhanced metalorganic chemical vapor deposition (MEMOCVD). Improved quality of AlGaN has allowed us to achieve milliwatt-power at wavelengths ranging from 365 to 265 nm. For 295 and 280 nm LEDs, record CW powers with wall-plug-efficiency approaching 1.0% were realized. The CW power reached 1.2 and 1.0 mW at 20 mA for 280 and 295 nm LEDs, respectively. A multiple-chip package (UV lamp) emitted CW power of 11 mW at the wavelength of 280 nm. Under pulse operation, the 280 nm UV lamp produced power as high as 56 mW. The CW power levels at 20 mA were 0.5, 0.25 and 0.15 mW for a single-chip 275, 270 and 265 nm LEDs, respectively. A 265 nm UV lamp exhibited a record high CW power exceeding 1.5 mW. The applications of these DUV LEDs in bio-agents detection have been demonstrated and the preliminary results will be presented.

RF Transmission Line Method for Wide-Bandgap Heterostructures

IEEE Electron Device Letters, 2009

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

IEEE Electron Device Letters, 2001

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

IEEE Electron Device Letters, 1996

Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs

Electronics Letters, 2005

Michael Shur co-Founder, Vice-President and Chief Technology Officer of Electronics of the Future, Inc.

Cyber security affects literally every computer user. A multibillion world-wide industry is tryin... more Cyber security affects literally every computer user. A multibillion world-wide industry is trying to solve this growing and very dangerous problem. And all these efforts are focused on fighting malicious software. However, the malicious hardware is even more of a threat and much harder to detect. Our company - Electronics of the Future, Inc. - has developed technology and a family of products to detect the malicious hardware. Electronics of the Future is using terahertz scanning technology and Artificial Intelligence to detect genuine and faked integrated circuits.

2 views

Concepts of terahertz and infrared devices based on graphene structures

2011 International Conference on Infrared, Millimeter, and Terahertz Waves, 2011

ABSTRACT We overview novel concepts of terahertz and infrared interband detectors and lasers base... more

Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells

Acta Physica Polonica A, 2008

Semiconductor material doping based on target valence band discontinuity

Electronic gadget disinfection

Low frequency noise of light emitting diodes (Invited Paper)

SPIE Proceedings, 2005

Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors

MRS Proceedings, 2002

Gate current plays an important role in determining the characteristics and limiting performance ... more Gate current plays an important role in determining the characteristics and limiting performance of GaN-based field effect transistors. In GaN-based HFETs, the gate current limits the gate voltage swing and, hence, the maximum device current. Since the electron transport across the wide band gap barrier layer involves trapping, under certain bias conditions, the gate current leads to the threshold voltage shifts and causes reliability problems. Under reverse bias, the gate leakage in GaN-based HFET dominates the minimum (pinch-off) drain current. Insulating gate HFETs (i.e. Metal Oxide Heterostructure Field Effect Transistors – MOSHFETs) have the gate leakage currents 4 – 6 orders of magnitude lower than HFETs, even at elevated temperatures up to 300 °C. In this paper, we report on the gate current characteristics in these devices at room and elevated temperatures. We propose a semi-empirical model for the current-voltage characteristics in these devices, which is in good agreement ...

(Invited) Deep Ultraviolet Light Emitting Diodes: Physics, Performance, and Applications

ECS Transactions, 2014

The key factor for developing deep UV LEDs is material’s quality of nitride epitaxial films. It c... more The key factor for developing deep UV LEDs is material’s quality of nitride epitaxial films. It could be dramatically improved by using novel MEMOCVD® technique. Using very narrow quantum wells (QWs) and energy band gap engineering in deep UV LEDs improves overlap between electron and hole wave functions and increases the Internal Quantum Efficiency (IQE) and External Quantum Efficiency (EQE). A novel transparent and reflecting top contact further boosts IQE and EQE and increases the power output and high external quantum efficiency of our Deep UV LEDs. Research is now under way to use these devices for improving quality and extending storage time of fruits and vegetables. Other applications include water and air purification, sterilization, biological threat identification, applications in medicine, biology, industrial processes, defense, and homeland security.

Finite-Temperature Band Gap Renormalization in Highly Photoexcited GaN Epilayers

physica status solidi (b), 1999

High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors

physica status solidi (a), 2001

Controlled Synthesis of Single-Crystalline ZnO Nanoflakes on Arbitrary Substrates at Ambient Conditions

Particle & Particle Systems Characterization, 2013

Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire

Journal of Crystal Growth, 2011

Low-frequency noise in GaN nanowire transistors

Journal of Applied Physics, 2008

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

Journal of Applied Physics, 2008

ABSTRACT

$Research paper thumbnail of Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes$

Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes

Journal of Applied Physics, 2013

ABSTRACT An omnidirectional antireflection (AR) coating for a deep-ultraviolet (UV) AR band is de... more ABSTRACT An omnidirectional antireflection (AR) coating for a deep-ultraviolet (UV) AR band is designed and fabricated on the sapphire substrate of a deep-UV flip-chip light-emitting diode (LED) device. The two-layer AR coating uses the tailored- and low-refractive index nanoporous alumina fabricated by glancing-angle deposition methodology. The AR coating effectively matches the refractive indices between the air and sapphire substrate. At close-to-normal angles of incidence, this AR coating almost completely eliminates the Fresnel reflection at the sapphire/air interface of the deep-UV LED device. The resulting improvement of the light-extraction efficiency by 8% is in good agreement with the simulation results. For a total thickness of 172 nm for the two-layer AR coating, extinction was negligible (&lt;2%). The results show that nanoporous alumina thin films are excellent tailored- and low-refractive index thin film materials for high-performance deep-UV AR coating applications.

AlGaN Deep-Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2005

We report on the development of AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs) g... more We report on the development of AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs) grown by migration-enhanced metalorganic chemical vapor deposition (MEMOCVD). Improved quality of AlGaN has allowed us to achieve milliwatt-power at wavelengths ranging from 365 to 265 nm. For 295 and 280 nm LEDs, record CW powers with wall-plug-efficiency approaching 1.0% were realized. The CW power reached 1.2 and 1.0 mW at 20 mA for 280 and 295 nm LEDs, respectively. A multiple-chip package (UV lamp) emitted CW power of 11 mW at the wavelength of 280 nm. Under pulse operation, the 280 nm UV lamp produced power as high as 56 mW. The CW power levels at 20 mA were 0.5, 0.25 and 0.15 mW for a single-chip 275, 270 and 265 nm LEDs, respectively. A 265 nm UV lamp exhibited a record high CW power exceeding 1.5 mW. The applications of these DUV LEDs in bio-agents detection have been demonstrated and the preliminary results will be presented.

RF Transmission Line Method for Wide-Bandgap Heterostructures

IEEE Electron Device Letters, 2009

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

IEEE Electron Device Letters, 2001

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

IEEE Electron Device Letters, 1996

Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs

Electronics Letters, 2005

Effect of metallisation on surface acoustic wave velocity in GaN-on-sapphire structures

Electronics Letters, 2000